Maguang Zhu is an assistant professor at School of Integrated Circuits, Nanjing University. He received his Ph.D. degree in Physical Electronics from Peking University in 2020. He was a postdoctoral researcher in Peking University from 2021 to 2022. He focuses on the high performance and radiation-hard carbon nanotube integrated circuits and has over 10 published articles in Nature Electronics, Advanced Materials, Small, ACS Applied Materials & Interfaces etc.
Research Area
Radiation-harden CNT ICs, CNT CMOS ICs, flexible devices based on 2D Materials, design of integrated circuits based on carbon nanotube and 2D materials.
mzhu@nju.edu.cn
Selected Publications:
(1) Maguang Zhu; Hongshan Xiao; Gangping Yan; Pengkun Sun; Jianhua Jiang; Zheng cui; Jianwen Zhao; Zhiyong Zhang; Lianmao Peng ; Radiation-Hardened and Repairable Integrated Circuits Based on Carbon Nanotube Transistors with Ion Gel Gates, Nature Electronics, 2020, 3: 622-629.
(2) Maguang Zhu; Jia Si; Zhiyong Zhang; Lian-Mao Peng ; Aligning Solution-Derived Carbon Nanotube Film with Full Surface Coverage for High-Performance Electronics Applications, Advanced Materials, 2018, 30(23): 1707068.
(3) Xin Wang#; Maguang Zhu#; Xiaoqian Li; Zongze Qin; Guanghao Lu; Jianwen Zhao; Zhi-Ling Zhang; Ultralow‐Power and Radiation‐Tolerant Complementary Metal‐Oxide‐Semiconductor Electronics Utilizing Enhancement‐Mode Carbon Nanotube Transistors on Paper Substrates, Advanced Materials, 2022, 34(30): 2204066.
(4) Maguang Zhu; Peng Lu; Xuan Wang; Qian Chen; Huiping Zhu; Yajie Zhang; Jianshuo Zhou; Haitao Xu; Zhengsheng Han; Jianwei Han; Rui Chen; Bo Li; Lian‐Mao Peng; Zhiyong Zhang ; Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics, Small, 2022, 19(1): 2204537.
(5) Maguang Zhu; Jianshuo Zhou; Pengkun Sun; Lian-Mao Peng; Zhiyong Zhang; Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors, ACS Applied Materials & Interfaces, 2021, 13(40): 47756-47763.
(6) Maguang Zhu; Zhiyong Zhang; Lian‐Mao Peng; High‐Performance and Radiation‐Hard Carbon Nanotube Complementary Static Random‐Access Memory, Advanced Electronic Materials 5, no. 7 (2019): 1900313.
(7) Lu Peng#; Maguang Zhu#; Peixiong Zhao; Chenwei Fan; Huiping Zhu; Jiantou Gao; Can Yang et al; Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors. ACS Applied Materials & Interfaces 2023.
(8) Luo Manman#; Maguang Zhu#; Miaomiao Wei; Shuangshuang Shao; Malo Robin; Changting Wei; Zheng Cui; Jianwen Zhao; and Zhiyong Zhang; Radiation-hard and repairable complementary metal–oxide–semiconductor circuits integrating n-type indium oxide and p-type carbon nanotube field-effect transistors. ACS Applied Materials & Interfaces 2020, 12 (44), 49963-49970.
(9) Si Jia, Lin Xu, Maguang Zhu, Zhiyong Zhang, and Lian‐Mao Peng. Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics. Advanced Electronic Materials 5, no. 8 (2019): 1900122.
(10)Zhou Jianshuo; Lijun Liu; Huiwen Shi; Maguang Zhu; Xiaohan Cheng; Li Ren; Li Ding; Lian-Mao Peng; Zhiyong Zhang; Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers. ACS Applied Materials & Interfaces 2021, 13 (31), 37475-37482.