Optoelectronics is one ofthe cornerstones of information technology in the post-Moore era. According to research data from LightCounting, global mobile data traffic has been growing at a rate of 60% annually in the past five years, while the bandwidth of optoelectronic devices has only been increasing by 10% annually, creating a significant contradiction in matching the big data demands. Traditional semiconductor optoelectronic materials are limited in aspects such as size scaling and heterogeneous integration due to factors like the short-channel effect and lattice constantmatching, which call for the new device architecture to develop high-performance, low-power optoelectronic devices.
In recent years, frontier optoelectronic materials, represented by 2D semiconductors, have achieved notable progress. They possess excellent optoelectronic properties such as atomic-level thickness, high carrier mobility, and strong light-matter interaction. The interlayer interaction in these materials is governed by van der Waals forces, allowing for seamless heterogeneous integration with traditional semiconductors through low-temperature back-end-of-line technology. These characteristics provide opportunities for developing new optoelectronic devices that meet the requirements of the post-Moore era and exploring new device physics.
We are now focusing on these research topics:
1. 2D TFT technology and display system.
2. Multifunctional optoelectronic system that fuses display, sensor, and computing functions.
3. Polaritonic device physics and optoelectronic integrated circuit (OEIC).
Figure 1. MoS2 TFT-driven micro-LED display.
Figure 2. Polariton-mediated energy transfer.
Haoliang Shen Zehua Hu
Associate Professor @Suzhou Laboratory Assistant Professor
Email: shenhl@szlab.ac.cn Email: zehuahu@nju.edu.cn
Wanqing Meng Xue Shen
Ph.D Ph.D student @Xidian University
Email: wanqingmeng@163.com Email: s646040@163.com
Fulin Zhuo Jiaxuan Wang
Ph.D student Ph.D Student
Email: fulzhuo@163.com Email:798517692@qq.com